? semiconductor components industries, llc, 2014 november, 2014 ? rev. 1 1 publication order number: ntst40100ct/d NTST40100CTG, ntsb40100ct-1g, ntsb40100ctg, ntsj40100ctg very low forward voltage trench-based schottky rectifier exceptionally low v f = 0.38 v at i f = 5 a features ? fine lithography trench ? based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? pb ? free and halide ? free packages are available typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc ? dc converters ? freewheeling and or ? ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94 ? 0 @ 0.125 in ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec 1 3 2, 4 www. onsemi.com see detailed ordering and shipping information on page 5 of this data sheet. ordering information pin connections to ? 220ab case 221a style 6 3 4 1 2 3 4 1 2 i2pak case 418d style 3 d2pak case 418b to ? 220fp case 221ah 3 4 1 2
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r , t c = 120 c) per device per diode i f(av) 40 20 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 125 c) per device per diode i frm 60 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 250 a operating junction temperature t j ? 40 to +150 c storage temperature t stg ? 40 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics rating symbol NTST40100CTG, ntsb40100ct ? 1g ntsb40100ctg ntsj40100ctg unit maximum thermal resistance per diode junction ? to ? case junction ? to ? ambient r jc r ja 1.3 70 0.79 46.3 4.0 105 c/w c/w electrical characteristics (per leg unless otherwise noted) rating symbol typ max unit maximum instantaneous forward voltage (note 1) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 20 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) (i f = 20 a, t j = 125 c) v f 0.46 0.56 0.71 0.41 0.52 0.63 ? ? 0.80 ? ? 0.68 v maximum instantaneous reverse current (note 1) (v r = 70 v, t j = 25 c) (v r = 70 v, t j = 125 c) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 12 8.0 20 20 1000 45 a ma a ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. typical reverse characteristics v f , instantaneous forward voltage (v) v r , instantaneous reverse voltage (v) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 90 80 70 60 50 40 30 20 0.001 0.01 0.1 1 10 100 figure 3. typical junction capacitance figure 4. current derating per leg v r , reverse voltage (v) t c , case temperature ( c) 100 10 1 0.1 10 100 1000 10,000 140 120 100 80 60 40 20 0 0 5 10 15 20 30 35 40 figure 5. current derating figure 6. forward power dissipation t c , case temperature ( c) i f(av) , average forward current (a) 140 120 100 80 60 40 20 0 0 10 20 30 50 60 70 80 22 18 24 10 6 4 2 0 0 2 4 8 10 12 16 18 i f , instantaneous forward current (a) i r , instantaneous reverse current (ma) c, junction capacitance (pf) i f(av) , average forward current (a) i f(av) , average forward current (a) p f(av) , average forward pow- er dissipation (w) 1.1 1.0 0.9 0.8 100 25 40 812141620 6 14 t a = 125 c t a = 150 c t a = 25 c t a = 125 c t a = 150 c t a = 25 c t j = 25 c square wave dc r jc = 1.3 c/w square wave dc r jc = 1.3 c/w square wave dc t j = 150 c i pk /i av = 5 10 20
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 4 typical characterisitics 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) figure 7. typical transient thermal response for ntst40100ct and ntsb40100ct ? 1g 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 figure 8. typical transient thermal response for ntsj40100ctg figure 9. typical transient thermal response for ntsb40100ctg 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w)
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 5 ordering information device package shipping ? NTST40100CTG to ? 220ab (pb ? free) 50 units / rail ntsb40100ct ? 1g i 2 pak (pb ? free) 50 units / rail ntsb40100ctg d 2 pak (pb ? free) 50 units / rail ntsb40100ctt4g d 2 pak (pb ? free) 800 / tape & reel ntsj40100ctg to ? 220fp (halide ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. marking diagrams a = assembly location y = year ww = work week aka = polarity designator x = g or h g = pb ? free package h = halide ? free package ay ww ts40100cg aka ay ww ts40100cg aka ay ww ts40100cx aka to ? 220ab i 2 pak d 2 pak to ? 220ab ayww ts40100cg aka to ? 220fp
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode i 2 pak (to ? 262) case 418d issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. ? t ? w g k a c e v j h 123 4 seating plane d 3 pl dim min max min max millimeters inches a 0.335 0.380 8.51 9.65 b 0.380 0.406 9.65 10.31 c 0.160 0.185 4.06 4.70 d 0.026 0.035 0.66 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.094 0.110 2.39 2.79 j 0.013 0.025 0.33 0.64 s 0.390 ref 9.90 ref v 0.045 0.070 1.14 1.78 w 0.522 0.551 13.25 14.00 ? b ? m b m 0.13 (0.005) t s f f 0.122 ref 3.10 ref k 0.500 0.562 12.70 14.27
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 7 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k
NTST40100CTG, ntsb40100ct ? 1g, ntsb40100ctg, ntsj40100ctg www. onsemi.com 8 package dimensions to ? 220 fullpack, 3 ? lead case 221ah issue f scale 1:1 dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.50 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.90 a1 2.50 2.90 h1 6.60 7.10 e q l1 b2 e d l p 123 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 6. contours and features of the molded package body may vary within the envelop defined by dimensions a1 and h1 for manufacturing purposes. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 front view side view section d ? d alternate construction section a ? a a note 6 a dd note 6 h1 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warrant y, representation or guarantee regarding the suitability of it s products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntst40100ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
